QQ客服 官方微博 反馈留言

	Semiconductor laser element
	YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO
	1982-06-03
著作权人	SHARP KK
专利号	JP1982089290A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To obtain an inner striped type semiconductor with a low threshold value by flowing current only in a striped groove making the inside of the groove an n type clad layer and the outside a p type clad layer. CONSTITUTION:An n type locked up layer 37, an n type clad layer 31, a light guiding layer 32, and an n type active layer 33, a clad layer 34 and a cap layer 31 are consecutively formed on an p type GaAs substrate 36 doped with Zn. A p type stripe groove 38 is formed extending from a part of the n clad layer 31 to the light guiding layer 32 by diffusing the Zn in the substrate 36 by heat treatment. Because the current flows only in the inside striped groove, a low threshold current semiconductor laser element is obtained.
公开日期	1982-06-03
申请日期	1980-11-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87050]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982089290A. 1982-06-03.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。