Semiconductor laser element | |
YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO | |
1982-06-03 | |
著作权人 | SHARP KK |
专利号 | JP1982089290A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element |
英文摘要 | PURPOSE:To obtain an inner striped type semiconductor with a low threshold value by flowing current only in a striped groove making the inside of the groove an n type clad layer and the outside a p type clad layer. CONSTITUTION:An n type locked up layer 37, an n type clad layer 31, a light guiding layer 32, and an n type active layer 33, a clad layer 34 and a cap layer 31 are consecutively formed on an p type GaAs substrate 36 doped with Zn. A p type stripe groove 38 is formed extending from a part of the n clad layer 31 to the light guiding layer 32 by diffusing the Zn in the substrate 36 by heat treatment. Because the current flows only in the inside striped groove, a low threshold current semiconductor laser element is obtained. |
公开日期 | 1982-06-03 |
申请日期 | 1980-11-25 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/87050] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KK |
推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982089290A. 1982-06-03. |
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