QQ客服 官方微博 反馈留言

	Buried semiconductor laser
	MITO IKUO
	1986-04-17
著作权人	NEC CORP
专利号	JP1986075585A
国家	日本
文献子类	发明申请
其他题名	Buried semiconductor laser
英文摘要	PURPOSE:To manufacture an element which exhibits stable basic lateral mode oscillator in a high yield by forming semiconductor layers having large refrac tive indexes on both sides of an active layer with good reproducibility. CONSTITUTION:Two parallel grooves 50, 51 are formed between mesa stripes 52 which contains active layers to become light emitting regions by selectively etching to the active layers 3 on a multilayer film substrate laminated with a plurality of layers including an InGaAsP active layer 3 on an N type InP substrate At least three layers of an InGaAsP 4-dimensional buried layer 6 for coating the side of the active layer in a mesa stripe, a P type InP current block layer 7 and an N type InP current enclosure layer 8 are formed by not laminating on the top of the stripe 52, and a P type InP buried layer 9 and a P type InGaAsP electrode forming layer 10 are laminated over the entire surface. The layer 6 is always grown over the layer 3 and the side of the layer 4 by controlling the thickness of the grown film. Thus, an element which oscillates in a stable basic lateral mode is obtained in a very high yield.
公开日期	1986-04-17
申请日期	1984-09-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87029]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	MITO IKUO. Buried semiconductor laser. JP1986075585A. 1986-04-17.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。