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	Liquid phase epitaxy
	SASAI YOICHI; OGURA MOTOTSUGU
	1988-01-05
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988000114A
国家	日本
文献子类	发明申请
其他题名	Liquid phase epitaxy
英文摘要	PURPOSE:To contrive to easily make uniform the composition and thickness of grown layers by arranging solution tanks of first and second solution reservoirs in a manner that each tank enters into another solution reservoir alternately so the growing solutions filling the solution reservoir communicate with each other. CONSTITUTION:This device is composed of a substrate holder 4 in which an InP substrate 1 is attached to a containing recess, a solution holder 5 provided with InP growing solution reservoirs 9 and InGaAsP growing solution reservoirs 10 which are separated from one anther, and a boat 6 for mounting the substrate holder 4 and the solution holder 5. The InP growing solution reservoir 9 and the InGaAsP growing solution reservoir 10 comprise plural solution tanks 9a-9d and 10a-10d respectively and the solution tanks 9a-9d and 10a-10d extend under a central partition 5a of the solution holder 5 and penetrate through the adjacent growing solution reservoirs 10 and 9. Because a capacity of the growing solution reservoirs 9 and 10 is large, the change of composition due to the exhaustion of a solute becomes small. Accordingly, the modulation of the growing conditions is not neccessary when forming multiple growth layers and the composition and thickness of the layers become uniform.
公开日期	1988-01-05
申请日期	1986-06-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87018]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SASAI YOICHI,OGURA MOTOTSUGU. Liquid phase epitaxy. JP1988000114A. 1988-01-05.

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