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	A semiconductor laser device
	KANEIWA, SHINJI 101 KYOBATE MANSION; TAKIGUCHI, HARUHISA; YOSHIDA, TOSHIHIKO; MATSUI, SADAYOSHI
	1986-08-27
著作权人	SHARP KABUSHIKI KAISHA
专利号	EP0192451A2
国家	欧洲专利局
文献子类	发明申请
其他题名	A semiconductor laser device
英文摘要	A semiconductor laser device comprises a GaAlAs first cladding layer (2), a Ga1-xAlxAs (0≦×≦0.4) active layer (3) for laser oscillation, an In1-yGayP1-zAsz (z=2.04y-04, and (0≦z≦1)optical guiding layer (4) with a diffraction grating (44) thereon, a GaAlAs buffer layer (9) disposed between said active layer (3) and said optical guiding layer (4), and a GaAlAs second cladding layer (5), the width of the forbidden band of said buffer layer (9) being greater than that of said active layer (3) and smaller than that of said optical guiding layer (4).
公开日期	1986-08-27
申请日期	1986-02-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86993]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KANEIWA, SHINJI 101 KYOBATE MANSION,TAKIGUCHI, HARUHISA,YOSHIDA, TOSHIHIKO,et al. A semiconductor laser device. EP0192451A2. 1986-08-27.

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