Semiconductor laser device | |
OKAI MAKOTO; KAYANE NAOKI | |
1990-01-26 | |
著作权人 | HITACHI LTD |
专利号 | JP1990025086A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To obtain a distributed feedback type semiconductor laser whose light intensity is uniform in an axial direction by a method wherein a phase shifting region of a certain length is provided, whose phase shift amount is made to be expressed by pi + or -2pia (a=1, 2.). CONSTITUTION:A diffraction grating 2 is formed on an n-type InP substrate. For instance, provided that the period of the diffraction grating 2 is 240.00nm and the length of the phase shifting region is 100mum, the period of the phase shifting region is 44nm. By these processes, a phase shift of 5pi radians can be obtained between the right side and the left side of the phase shifting region. The following are epitaxially grown in succession through a liquid growth method after the diffraction grating has been formed: an n-type InGaAsP optical guide layer 4; a non-doped InGaAsP active layer 5; a p-type InGaAsP buffer layer 6; a p-type InP clad layer 7; and a non-doped InGaAsP cap layer 8. Next, a p-side electrode 9 and an n-side electrode 10 are formed through evaporation, and a cleavage is performed so as to make a resonator have a specified length, and then a reflection preventing film 11 of SiNx is formed to obtain a required laser. |
公开日期 | 1990-01-26 |
申请日期 | 1988-07-13 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/86990] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | OKAI MAKOTO,KAYANE NAOKI. Semiconductor laser device. JP1990025086A. 1990-01-26. |
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