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	Semiconductor laser device
	OKAI MAKOTO; KAYANE NAOKI
	1990-01-26
著作权人	HITACHI LTD
专利号	JP1990025086A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a distributed feedback type semiconductor laser whose light intensity is uniform in an axial direction by a method wherein a phase shifting region of a certain length is provided, whose phase shift amount is made to be expressed by pi + or -2pia (a=1, 2.). CONSTITUTION:A diffraction grating 2 is formed on an n-type InP substrate. For instance, provided that the period of the diffraction grating 2 is 240.00nm and the length of the phase shifting region is 100mum, the period of the phase shifting region is 44nm. By these processes, a phase shift of 5pi radians can be obtained between the right side and the left side of the phase shifting region. The following are epitaxially grown in succession through a liquid growth method after the diffraction grating has been formed: an n-type InGaAsP optical guide layer 4; a non-doped InGaAsP active layer 5; a p-type InGaAsP buffer layer 6; a p-type InP clad layer 7; and a non-doped InGaAsP cap layer 8. Next, a p-side electrode 9 and an n-side electrode 10 are formed through evaporation, and a cleavage is performed so as to make a resonator have a specified length, and then a reflection preventing film 11 of SiNx is formed to obtain a required laser.
公开日期	1990-01-26
申请日期	1988-07-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86990]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	OKAI MAKOTO,KAYANE NAOKI. Semiconductor laser device. JP1990025086A. 1990-01-26.

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