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	Optical integrated circuit device
	YAMAMOTO ATSUYA; ITO KUNIO
	1987-05-29
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987118593A
国家	日本
文献子类	发明申请
其他题名	Optical integrated circuit device
英文摘要	PURPOSE:To reduce parasitic capacitance yielded by connection of a semiconductor laser and an FET single body and to obtain high reliability, by forming and integrating the semiconductor laser and a driving FET on a conducting substrate. CONSTITUTION:On the surface of a one-conductivity type semiconductor substrate 2, a first semiconductor layer 3, which has a reverse conductivity type and two parallel ridges, is formed so that the bottom part of a groove between the two ridges reaches the semiconductor substrate 2. Layers including an active layer 5 are formed on the first semiconductor layer 3 and on said groove part. Thus a semiconductor laser element is formed. On said semiconductor substrate 2, the second semiconductor layer having the reverse conductivity type and the third semiconductor layer having the one-conductivity type are formed at a part separated from the first semiconductor layer 3. With the third semiconductor layer as an active layer, a field effect transistor is formed. For example, on the conducting P-type GaAs substrate 2, the N-type GaAs blocking layer 3, a P-type GaAlAs first clad layer 4, the GaAlAs active layer 5, an N-type GaAlAs second clad layer 6, an N-type GaAs cap layer 7, an SiO2 oxide film 9 and the like are formed as shown in the Figure.
公开日期	1987-05-29
申请日期	1985-11-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86985]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YAMAMOTO ATSUYA,ITO KUNIO. Optical integrated circuit device. JP1987118593A. 1987-05-29.

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