Manufacture of algainp visible laser | |
ARIMOTO SATOSHI | |
1991-11-18 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1991257889A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of algainp visible laser |
英文摘要 | PURPOSE:To increase carrier concentration to practical level and decrease the deterioration of laser properties so as to get high reliability by lowering the V/III ratio at the time of growth of n-type AlGaInP layer doped with Si than the V/III at the time of growth of other GaInP layers and a P-type AlGaInP layer. CONSTITUTION:To grow the basic double hetero junction of the visible laser having favorable properties by the use of an n-type AlGaInP clad layer 2b doped with Si, for example, only the AlGaInP clad layer doped with Si is grown at the V/III ratio of 100 or thereabout, and other layers such as 3 and 4 are grown at the V/III ratio of about 500. At this time, the change of the V/III ratio is done by changing the PH3 flow of group V material. |
公开日期 | 1991-11-18 |
申请日期 | 1990-03-07 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/86935] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | ARIMOTO SATOSHI. Manufacture of algainp visible laser. JP1991257889A. 1991-11-18. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论