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	Manufacture of algainp visible laser
	ARIMOTO SATOSHI
	1991-11-18
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991257889A
国家	日本
文献子类	发明申请
其他题名	Manufacture of algainp visible laser
英文摘要	PURPOSE:To increase carrier concentration to practical level and decrease the deterioration of laser properties so as to get high reliability by lowering the V/III ratio at the time of growth of n-type AlGaInP layer doped with Si than the V/III at the time of growth of other GaInP layers and a P-type AlGaInP layer. CONSTITUTION:To grow the basic double hetero junction of the visible laser having favorable properties by the use of an n-type AlGaInP clad layer 2b doped with Si, for example, only the AlGaInP clad layer doped with Si is grown at the V/III ratio of 100 or thereabout, and other layers such as 3 and 4 are grown at the V/III ratio of about 500. At this time, the change of the V/III ratio is done by changing the PH3 flow of group V material.
公开日期	1991-11-18
申请日期	1990-03-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86935]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ARIMOTO SATOSHI. Manufacture of algainp visible laser. JP1991257889A. 1991-11-18.

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