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	半導体レーザ装置及びその製造方法
	田中 明
	1998-10-16
著作权人	株式会社東芝
专利号	JP2839696B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置及びその製造方法
英文摘要	PURPOSE:To increase a manufacturing efficiency of a laser as well as to improve the yield of the laser and to make it possible to take place a stable laser oscillation by a method wherein the laser is provided with an upper layer part formed by laminating alternately a plurality of quantum well layers and a plurality of barrier layers and a distributed feedback part is provided on the interface between the upper layer part and an optical waveguide layer. CONSTITUTION:A laser is manufactured in a structure, wherein a lower layer part 13a formed by laminating alternately first conductivity type quantum well layers 14a and barrier layers 15a and an upper layer part 13b formed by laminating alternately second conductivity type quantum well layers 14a and barrier layers 15b are provided at an active region 13 and a distributed feedback part is provided on the interface between the part 13b and a second conductivity type optical waveguide layer. The dimension to be continued of each layer is decided by pattering and the laser can be formed in a state that the form of the interface is sufficiently controlled. Thereby, as the manufacture of the laser is facilitated, the yield of the laser is improved, the effect of the form of the interface does not appear in the quantum well layers in the part 13a and a laser oscillation in a stable single transverse mode can take place.
公开日期	1998-12-16
申请日期	1990-10-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86934]
专题	半导体激光器专利数据库
作者单位	株式会社東芝
推荐引用方式 GB/T 7714	田中 明. 半導体レーザ装置及びその製造方法. JP2839696B2. 1998-10-16.

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