| Semiconductor light emitting device | |
| HINO ISAO | |
| 1987-08-06 | |
| 著作权人 | NIPPON ELECTRIC CO |
| 专利号 | JP1987179189A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve laser oscillation characteristics by reducing current spreading in an (AlyGa1-y)0.5In0.5P cladding layer. CONSTITUTION:On an n-type GaAs substrate 1, a double hetero structure is constituted by an n-type (Al0.4Ga0.6)0.5In0.5P cladding layer 2 of 1mum thickness, an undoped Ga0.5In0.5P active layer 3 of 0.1mum thickness and a p-type (Al0.4 Ga0.6)0.5In0.5P cladding layer 4 and an n-type (Al0.4Ga0.6)0.5In0.5P inversion layer 5 is formed on the double hetero structure. After the inversion layer 5 is selectively etched off with an etchant such as diluted hydrochloric acid mixed solution so as to form a stripe region 9 of 2mum width, a p-type (Al0.4Ga0.6)0.5In0.5P layer 6 is again made to grow over the whole surface. Further, Ti/Pt/Au and Au/Ge are evaporated to form a p-type side electrode 7 and an n-type side electrode 8 respectively. Resonance planes are formed by cleavage and individual chips are formed by scribing. |
| 公开日期 | 1987-08-06 |
| 申请日期 | 1986-01-31 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86924]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | HINO ISAO. Semiconductor light emitting device. JP1987179189A. 1987-08-06. |
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