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	Semiconductor laser and manufacture thereof
	YANASE TOMOO
	1987-08-01
著作权人	NEC CORP
专利号	JP1987176182A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To obtain a laser, in which high-speed modulation is possible, oscillation is highly efficient and its structure has high productivity, by passing most currents through an active layer by high-resistance current narrowing layers in crystal laminated bodies on both sides of the active layer, and decreasing capacitance without using a P-N junction for a current blocking layer. CONSTITUTION:On a P-type semiconductor substrate 11, the first crystal laminated bodies comprising a P-type buffer layer 12, a high-resistance current narrowing layer 13 and an N-type current narrowing layer 16 are epitaxially grown by a vapor phase growing method. When In metal including iron is used as a raw material for the high-resistance current narrowing layer 13, a high resistance layer is grown, and a sufficiently large value is obtained for the current narrowing. A large-area homogeneous wafer is obtained by the vapor phase growing method. Thus mass production property is improved. Then, a silicon oxide mask 21 having a stripe shaped window is formed on the surface of the current narrowing layer 16. A V-shaped groove is formed with bromomethanol. The second crystal laminated bodies comprising a P-type clad layer 14, an active layer 15 for laser oscillation, an N-type clad layer 17 and a contact layer 18 are sequentially grown epitaxially by a liquid phase growing method. Gold and zinc are used for a P-side electrode 19. Gold and tin are used for an N-side electrode 20.
公开日期	1987-08-01
申请日期	1986-01-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86845]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YANASE TOMOO. Semiconductor laser and manufacture thereof. JP1987176182A. 1987-08-01.

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