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	Semiconductor light emitting device
	NAKATSU, HIROSHI; NAKAMURA, JUN-ICHI
	1999-05-04
著作权人	SHARP KABUSHIKI KAISHA
专利号	US5900642
国家	美国
文献子类	授权发明
其他题名	Semiconductor light emitting device
英文摘要	On a first cladding layer formed of n-type Al0.7Ga0.3P, an active region having a staggered-type (type II) heterojunction superlattice structure is disposed. The active region includes 50 light emitting layers formed of Al0.1Ga0.9P doped with nitrogen and 50 barrier layers formed of Al0.7Ga0.3P. The 50 light emitting layers and the 50 barrier layers formed of such materials are stacked alternately to form 50 pairs. On the active region, a second cladding layer formed of Al0.1Ga0.9P is disposed. In the formation of the active layers the composition of the light emitting layer and the barrier layer end the thickness of the barrier layer are controlled so that the isoelectronic level in the light emitting layer and the quantum level in the barrier layer will fulfill the resonance conditions. The carriers injected into the conduction band are confined in the quantum level in the barrier layer and transfer to the isoelectronic level in the light emitting layer by the resonance tunneling effect.
公开日期	1999-05-04
申请日期	1998-02-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86770]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NAKATSU, HIROSHI,NAKAMURA, JUN-ICHI. Semiconductor light emitting device. US5900642. 1999-05-04.

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