QQ客服 官方微博 反馈留言

	Semiconductor laser device
	KUBOTA MASAYUKI
	1990-11-06
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990271586A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To make it possible to monitor each light intensity of the beams independently, emitted from a plurality of light-emitting sections, by having a plurality of photo detectors ready that are provided corresponding to each laser beam emitted from the rear end and detect the wave-front converted laser beams from an optical wave guide layer as monitor beams. CONSTITUTION:The laser beams A', B' emitted from the rear end of a laser diode (LD) element 1 are wave-guided by an optical wave-guide layer 5. This wave-guide layer 5 has a lens 6 which converts the laser beams A', B' from diffused beams into condensed beams A'', B'', and the beams A'', B'', are separated and strike the photo detectors 32, 31 respectively provided on the rear ends of the optical wave-guide layer 5. This makes it possible to detect each light intensity of the beams A'', B'' by the photo detectors 32, 31 independently, and makes it possible to monitor each light intensity of the beams A, B emitting from the front of the 2-beam array LD element L.
公开日期	1990-11-06
申请日期	1989-04-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86768]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KUBOTA MASAYUKI. Semiconductor laser device. JP1990271586A. 1990-11-06.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。