QQ客服 官方微博 反馈留言

	Semiconductor laser device
	KOIZUMI YOSHIHIRO
	1989-07-31
著作权人	NEC CORP
专利号	JP1989189984A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain the high yield of a nondefective element by introducing a novel device structure to a high-resistance semiconductor layer buried type semiconductor laser. CONSTITUTION:A reverse mesa 13 composed of a (111)A face is formed up to a depth which does not reach an active region 15 in the mesa parallel with the direction. A forward mesa 16 consisting of a (111)B face is shaped up to a depth reaching a substrate 17 including the active region 15, and a section from the surface of he substrate 17 to the height of the head section of the mesa is embedded in a high-resistance semiconductor layer 14. A buried layer 60 is buried and grown only on a (100) face on both sides of an active region 65 at that time, there are low resistance regions 68 only on both sides of the projecting side faces of both mesas in the (111)A faces, and currents are confined effectively only into the active region 65, thus acquiring a semiconductor laser having low threshold currents and small parasitic capacitance. Accordingly, an excellent high-resistance buried layer is obtained, thus largely improving the yield of a nondefective element.
公开日期	1989-07-31
申请日期	1988-01-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86691]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KOIZUMI YOSHIHIRO. Semiconductor laser device. JP1989189984A. 1989-07-31.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。