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	Semiconductor laser device
	NOJIRI HIDEAKI; HARA TOSHITAMI; SEKIGUCHI YOSHINOBU; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI
	1987-11-21
著作权人	CANON INC
专利号	JP1987269385A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To eliminate contamination and the like to be developed after cleaving a general LD and easily make laser beams coming from many points parallel by causing an active layer to have multi quantum-wells and laser beam emission surfaces to be in disorder to serve as a protective coat. CONSTITUTION:Five laminations for N-type GaAs 22, N-type AlGaAs layer 23, non- doping GaAs, and Al0.2Ga0.8As are performed repeatedly on an N-type GaAs substrate 21 according to a molecular beam epitaxy system and finally an GaAs is laminated, resulting in the formation of active areas 24 having multi-quantum wells. In addition, the above areas make two layers; i.e. P-type AlGaAs layer 25, and P GaAs layer 26 grow in sequence to form Si3N4 according to a plasma CVD. After its Si3N4 in a given area is removed, impurities are diffused to develop a mixed crystal 18 and Si3N4 of the rest is processed by etching in order to form a part applied by an electric current 20 and then, Cr-Au is converted into an ohmic electrode 28 by vapor-deposition and after that, etching is performed to separate its electrode, resulting in the formation of non-impregnation area 19 as a remainder. In the next place, an ohmic electrode 29 for N-type of the rear side is formed and is treated by heating and also a resonance face R making anglestheta1 and theta2 is processed vertically according to a reactive ion etching.
公开日期	1987-11-21
申请日期	1986-05-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86644]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	NOJIRI HIDEAKI,HARA TOSHITAMI,SEKIGUCHI YOSHINOBU,et al. Semiconductor laser device. JP1987269385A. 1987-11-21.

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