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	Semiconductor laser element
	SUYAMA NAOHIRO; HAYAKAWA TOSHIRO; KONDO MASAFUMI; TAKAHASHI HISATOSHI
	1989-07-19
著作权人	SHARP CORP
专利号	JP1989181492A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To reduce optical density generated in an active layer, and to increase an output by properly selecting the change of the refractive index of an optical guide layer having GRIN-SCH(Graded-Index Separate Confinement Heterostructure) structure and augmenting the spread of a beam. CONSTITUTION:An n-GaAs buffer layer 2, a first clad layer 3, a first optical guide layer 4, a quantum well active layer 5, a second optical guide layer 6 and a second clad layer 7 are formed on an n-GaAs substrate When the ends of the optical guide layers 4, 6 on the sides where the ends are connected to the clad layers 3, 7 are represented by le while the ends of the optical guide layers 4, 6 on the sides where the quantum well active layer 5 is connected as origins, the refractive indices ng(lg) of the optical guide layers 4, 6 satisfy the relationship of formula I to refractive indices no, nc in lg=olg=lc within a range of olg
公开日期	1989-07-19
申请日期	1988-01-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86581]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	SUYAMA NAOHIRO,HAYAKAWA TOSHIRO,KONDO MASAFUMI,et al. Semiconductor laser element. JP1989181492A. 1989-07-19.

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