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	Surface emission type semiconductor laser
	TAKAMIYA SABURO; HIGUCHI HIDEYO
	1988-04-26
著作权人	三菱電機株式会社
专利号	JP1988095690A
国家	日本
文献子类	发明申请
其他题名	Surface emission type semiconductor laser
英文摘要	PURPOSE:To monitor beams emitted from a second main surface by monolithically forming a photodetector such as a photodiode to the second main surface. CONSTITUTION:Beams L generated in an active layer 1 are reflected, using a first main surface 5 and another surface 13 as mirror surfaces, thus conducting laser oscillation. Beams are monitored by a photodiode 15 consisting of P-type clad layer 3 and an N-type contact layer 10 at that time, and an optical output emitted can be kept constant. The forbidden band width of an N-type contact layer 10 shaping one part of the photodiode 15 is controlled so that absorptance to laser beams during the reciprocation of the layer 10 is brought to 50% or less. The control can be executed by controlling the composition of the N-type contact layer 10 or controlling thickness thereof, but it can also be adjusted by fluctuating bias voltage applied to a P-N junction consisting of the P-type clad layer 3 and the N-type contact layer 10.
公开日期	1988-04-26
申请日期	1986-10-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86481]
专题	半导体激光器专利数据库
作者单位	三菱電機株式会社
推荐引用方式 GB/T 7714	TAKAMIYA SABURO,HIGUCHI HIDEYO. Surface emission type semiconductor laser. JP1988095690A. 1988-04-26.

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