| Integrated semiconductor laser device | |
| MORIKI KAZUNORI; OOSAWA JIYUN; IKEDA KENJI; SUZAKI WATARU | |
| 1984-08-04 | |
| 著作权人 | MITSUBISHI DENKI KK |
| 专利号 | JP1984135790A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor laser device |
| 英文摘要 | PURPOSE:To enable rear section specular coating and cleavage, and to improve performance by extracting beams from a side surface in the rectangular direction to a resonant optical axis of an active layer or a wave guide layer in a semiconductor laser element and supplying a photodetector with said beams. CONSTITUTION:With a semiconductor laser element 1, a resonator is formed by resonator specular surfaces 4a, 4b, it is oscillated by currents flowing between a power supply terminal 7 for drive and a common electrode 9, and oscillation beams are wave-guided by an active layer 6 and an optical guide layer 3 optically coupling with the active layer 6. One part of beams is converted into a radiation mode by a projecting section 10 formed to the optical guide layer 3 at that time, and emitted toward a photodetector 2. |
| 公开日期 | 1984-08-04 |
| 申请日期 | 1983-01-24 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85338]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MORIKI KAZUNORI,OOSAWA JIYUN,IKEDA KENJI,et al. Integrated semiconductor laser device. JP1984135790A. 1984-08-04. |
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