QQ客服 官方微博 反馈留言

	Semiconductor light emitting element
	KATOU YOSHITAKE
	1984-11-27
著作权人	NIPPON DENKI KK
专利号	JP1984208887A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting element
英文摘要	PURPOSE:To improve the luminous efficiency of an active layer by a method wherein the titled element is equipped with a hetero junction structure that the active layer consisting of a semiconductor layer of a small band gap energy is sandwiched by the first and second clad layers composed of an N type and a P type semiconductor layer and wherein the impurity concentration is more increased as the region goes more distant from the hetero interface between at least one of the clad layers and the active layer. CONSTITUTION:Using S doped InP in the N type clad layer 12, InGaAsP emitting light at the wavelength of 3mum as the active layer 13, and Zn doped InP in the P type clad layer 14, the impurity concentration of said layer 12 is set at 2.8X10cm, that of said layer 14 at 3.2X10cm in the hetero interface 16 between the active layer 13 and said clad layer 14, while said layer 14 is grown so that the impurity reaches 3X10cm during increase in the direction of layer thickness, impurity modulated doping is performed by making the impurity amount varied. With this sample, the luminous efficiency is largely improved at 5 times conventional in the luminous intensity of photo luminescence and about 4 times in the luminous amount.
公开日期	1984-11-27
申请日期	1983-05-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85331]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KATOU YOSHITAKE. Semiconductor light emitting element. JP1984208887A. 1984-11-27.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。