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	Semiconductor optical function element
	HINO ISAO; IWAMOTO KUNIAKI
	1982-12-20
著作权人	NIPPON DENKI KK
专利号	JP1982207387A
国家	日本
文献子类	发明申请
其他题名	Semiconductor optical function element
英文摘要	PURPOSE:To introduce oscillating beams efficiently to a striped three-dimensional photo-waveguide section from a rectilinear striped laser oscillator by eachforming the oscillator section and the photo-waveguide section at a predetermined interval from the oscillator section onto a semiconductor substrate by laminates and burying a section between the oscillator section and the photo-waveguide section by a single semiconductor layer. CONSTITUTION:An N type Al Ga1- As layer 12, an N type Al Ga1- As layer 13, an N type, P type or un-doped AlxGa1-xAs active layer 14, a P type Al Ga1- As layer 15 and a P type Al Ga1- As layer 16 are rectilinearly laminated and shaped onto the N type GaAs substrate 11 in striped form, and the striped section is used as the laser oscillator section. An N type Al Ga1- layer 17, an N type AlyGa1-yAs layer 18 and an N type Al Ga1- As layer 19, energy gaps thereof are larger than the layer 14, are each grown similarly onto the substrate 11 in striped form at the interval from the oscillator section, and the striped section is employed as the three-dimensional photo-waveguide section. Sections except these sections are buried by the N type AlzGa1-zAs layer 20, and the optical function element is obtained.
公开日期	1982-12-20
申请日期	1981-06-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85251]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	HINO ISAO,IWAMOTO KUNIAKI. Semiconductor optical function element. JP1982207387A. 1982-12-20.

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