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	A buried type semiconductor laser device
	YOSHIDA, TOSHIHIKO; TAKIGUCHI, HARUHISA; KANEIWA, SHINJI 101 KYOBATE MANSION; KUDO, HIROAKI; MATSUI, SADAYOSHI
	1987-03-04
著作权人	SHARP KABUSHIKI KAISHA
专利号	EP0212977A2
国家	欧洲专利局
文献子类	发明申请
其他题名	A buried type semiconductor laser device
英文摘要	A buried type semiconductor laser device comprises a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate (1), wherein said laser-oscillation operating area contains a buffer layer (2) having the same polarity as said substrate, an active layer (3) and a cladding layer (4) having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of a burying layer (5) and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate,through said substrate (1) or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer (5) from said cladding layer (4), thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
公开日期	1987-03-04
申请日期	1986-08-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85166]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	YOSHIDA, TOSHIHIKO,TAKIGUCHI, HARUHISA,KANEIWA, SHINJI 101 KYOBATE MANSION,et al. A buried type semiconductor laser device. EP0212977A2. 1987-03-04.

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