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	Tunable semiconductor laser
	AMANN, MARKUS-CHRISTIAN; BAUMANN, GERHARD; HEINEN, JOCHEN; THULKE, WOLFGANG
	1991-04-16
著作权人	FINISAR CORPORATION
专利号	US5008893
国家	美国
文献子类	授权发明
其他题名	Tunable semiconductor laser
英文摘要	A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.
公开日期	1991-04-16
申请日期	1990-02-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85162]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	AMANN, MARKUS-CHRISTIAN,BAUMANN, GERHARD,HEINEN, JOCHEN,et al. Tunable semiconductor laser. US5008893. 1991-04-16.

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