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	Semiconductor laser device and manufacture thereof
	NAMISAKI HIROBUMI; OMURA ETSUJI
	1990-02-22
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990052483A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device and manufacture thereof
英文摘要	PURPOSE:To achieve a uniform carrier distribution on an activation layer and an efficient current injection by forming each conductive-type impurities area penetrating the activation layer selectively from both the left and right sides and forming a p-n junction in reference to an activation area making higher a conductivity of one clad layer. CONSTITUTION:After a semiconductor laser device forms a high-resistance AlGaAs layer 4 on a semi-insulating(SI) GaAs substrate 10, it forms a P-AlGaAs clad layer 3, a multiple-quantum well, namely a MQW activation layer 2, and an n-Al GaAs clad layer 1 in sequence. Then, a p-type impurities ion impregnation area 20 and an n-type impurities ion implantation area 21 are formed on these by the ion implantation method, respectively. The edge of an n-type impurities implantation area 21 and that of a p-type impurities implantation area 20 within an n-AlGaAs layer 3 are in AlGaAs junction with a high potential barrier, nearly no current flows, current flows through a p-n junction around the activation layer 2 with lower potential barrier than it, and carriers (in this case, electron) are injected into this activation layer 2. Thus, distribution of the carriers injected into this activation layer 2 becomes nearly uniform, thus achieving an efficient injection.
公开日期	1990-02-22
申请日期	1988-08-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85153]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAMISAKI HIROBUMI,OMURA ETSUJI. Semiconductor laser device and manufacture thereof. JP1990052483A. 1990-02-22.

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