QQ客服 官方微博 反馈留言

	Manufacture of semiconductor laser element
	INOGUCHI KAZUHIKO; TAKIGUCHI HARUHISA; ATSUNUSHI FUMIHIRO; NAKATSU HIROSHI; SAKANE CHITOSE; SUGAWARA SATOSHI; OKUMURA TOSHIYUKI
	1991-07-17
著作权人	SHARP CORP
专利号	JP1991165585A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser element
英文摘要	PURPOSE:To easily form a semiconductor laser element of buried structure by a method wherein a selective growth is performed onto an InP substrate provided with a face (100) on which an inverted mesa ridge has been formed in a orientation [011]. CONSTITUTION:Photoresist is applied onto the face (100) of an N-type InP substrate 1 and left unremoved in a stripe in a orientation [011]. Then, the substrate 1 is subjected to a chemical etching using an HBr etchant to form an inverted mesa-shaped ridge of a width of 5mum. Crystal is made to grow on the substrate 1 provided with an inverted mesa-shaped protrusion through a vacuum MOCVD. The grown layer is a multilayered thin film composed of an Si-doped N-type InP buffer layer 2, an undoped GaInAsP active layer 3, a Zn doped P-type InP clad layer 4, and a Zn doped P-type GaInAsP contact layer, and at this point, the growth does not take place on a face {111} B due to a growth rate dependent on the face orientation, so that a trapezoidal region surrounded with its side face of a face {111} B and its upside of a face (100) in a direction that a growth takes place. Lastly, an AuGe electrode 7 and an AuZn electrode 8 are provided to the N-side and the P-side respectively.
公开日期	1991-07-17
申请日期	1989-11-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85138]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	INOGUCHI KAZUHIKO,TAKIGUCHI HARUHISA,ATSUNUSHI FUMIHIRO,et al. Manufacture of semiconductor laser element. JP1991165585A. 1991-07-17.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。