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	Semiconductor laser device
	AOYAGI, TOSHITAKA; SAKAINO, GO
	2005-02-03
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US20050025210A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	An n-InP second upper cladding layer is laid on a p-InP lower cladding layer while an active layer having upper and lower boundary surfaces that are uniformly flat in an optical waveguide direction is interposed therebetween. A diffraction layer having a phase-shifted structure provided in the direction of optical waveguide is interposed between the lower cladding layer and the active layer, or between the second upper cladding layer and the active layer. The length L of the diffraction grating layer in the direction of the optical waveguide is taken as L≦260 μm; a mean coupling factor κ of a diffraction grating layer is taken as κ≧130 cm−1; and κL satisfies 5.6>κL>3.0.
公开日期	2005-02-03
申请日期	2004-08-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85114]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	AOYAGI, TOSHITAKA,SAKAINO, GO. Semiconductor laser device. US20050025210A1. 2005-02-03.

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