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	Semiconductor laser array device
	YAMAMOTO ATSUYA; HIROSE MASANORI; YOSHIKAWA AKIO; SUGINO TAKASHI; ITO KUNIO
	1987-10-14
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987234388A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser array device
英文摘要	PURPOSE:To faciliate monolithic integration be a method wherein a plurality of lasers with double-hetero structures containing active layers are formed on a semiconductor substrate and the thickness of end plane reflection coatings on the cavity planes of one side are made different for the respective lasers. CONSTITUTION:A P-type GaAs buffer layer 7, a P-type AlGaAs cladding layer 6, an AlGaAs active layer 5, an N-type AlGaAs cladding layer 4, an N-type GaAs cap layer 3 and an AlGaAs isolation layer 2 are successively grown on a conductive P-type GaAs substrate 8. Then, stripe structures are formed in the AlGaAs isolation layer 2 by chemical etching. In this state, electrodes 1 and 9 are formed on the N-type side and the P-type side respectively. If the substrate is cleft into array-shape and fixed to a fixing jig 11 and subjected to sputtering, the thickness of the coating film become thinner near the position where the height of the fixing jig 11 is higher. Therefore, the thickness of the coating film can be controlled by controlling the angle and the position of the jig 1 As the reflectance of the respective end planes of the lasers are different, the extra process such as changing oscillation wavelength becomes unnecessary.
公开日期	1987-10-14
申请日期	1986-04-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85098]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YAMAMOTO ATSUYA,HIROSE MASANORI,YOSHIKAWA AKIO,et al. Semiconductor laser array device. JP1987234388A. 1987-10-14.

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