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	半導体レーザ
	平谷 雄二; 柏 亨
	1997-08-29
著作权人	光技術研究開発株式会社
专利号	JP2690951B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ
英文摘要	PURPOSE:To realize a semiconductor laser having simple construction, desirable thermal characteristics and decreased threshold current density and which is easy to construct in highly integrated manner, by providing a resonant mirror on the top and bottom faces of a step in a substrate. CONSTITUTION:In a semiconductor laser, an active layer 38 on the side face 34 of a step 32 emits light when current is supplied through N-and P-type electrodes 41 and 42 in the direction in parallel with the surface of a substrate, following the route consisting of a P-type second clad layer 40, a P-type first clad layer 39, the active layer 38 and an N-type clad layer in that order, for example. The emission of light is reflected and amplified by resonant mirrors 43 and 44 arranged on the top and bottom faces 33 and 35 of the step 32, respectively. Laser action is thus induced, and the semiconductor laser can perform stimulated emission of light in the direction orthogonal to the surface of the substrate. Some current possibly leaks from the P-type second clad layer 40 into the N-type clad layer 37 without passing through the P-type first clad layer 30 or the active layer 38, but such leak current will not flow in the forward direction of the homojunction since it has a higher threshold voltage in the forward direction of the homojunction than of a hetero junction. As a result, it is possible to prevent various losses and deterioration in thermal characteristics.
公开日期	1997-12-17
申请日期	1988-07-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85066]
专题	半导体激光器专利数据库
作者单位	光技術研究開発株式会社
推荐引用方式 GB/T 7714	平谷 雄二,柏 亨. 半導体レーザ. JP2690951B2. 1997-08-29.

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