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	Manufacture of semiconductor device
	SANADA TATSUYUKI
	1985-05-29
著作权人	FUJITSU KK
专利号	JP1985095989A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor device
英文摘要	PURPOSE:To facilitate the electrical isolation among elements by growing a compound semiconductor layer including Si impurities over the whole surface including level differences arranged on the surface of a III-V group compound semiconductor, by the molecular beam epitaxial growth method and utilizing the fact that a region coating an inclined plane of the level difference becomes high-resistance. CONSTITUTION:A mask 32 is arranged on the surface of an N type GaAs substrate 31 by lithography and etching is done by use of a mixed solution of sulfuric acid, hydrogen peroxide solution and water of 1:8:1 of a composition ratio to form a level difference in the substrate 3 Next, an N type Al0.3Ga0.7As clad layer 33, an N type GaAs active layer 34, an N type clad layer 35 of the semiconductor composition as the layer 33 and an N type GaAs layer 36 are laminated and grown over the whole surface including said level difference by a molecular beam epitaxial growth method. Consequently, the growth layer of an inclined plane of the level difference becomes high- resistance automatically and an electrical interference between the upper and lower stages of both sides of said difference can be prevented and the function of electrical isolation is fulfilled. After that, the desired elements are formed on both sides of the level difference respectively.
公开日期	1985-05-29
申请日期	1983-10-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85058]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	SANADA TATSUYUKI. Manufacture of semiconductor device. JP1985095989A. 1985-05-29.

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