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	Manufacture of semiconductor laser
	TAKEHARA HIROSHIGE; KUME MASAHIRO; SHIMIZU YUICHI; ITO KUNIO
	1988-02-25
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988044788A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To prevent a cleavage plane from being oxidized and increase its lifetime by vaporizing Al on the cavity plane in the case of forming of an end protecting film of a semiconductor laser and after that, treating with heat the above vaporized Al together with an element having a high vapor pressure or its powder comprising a semiconductor laser and causing Al to change into Al2O3. CONSTITUTION:Al 9 is vaporized on the cavity plane of semiconductor laser chip having double heterostructures of 200 Angstrom thickness. After that, the laser chip is vaccum-sealed together with a GaAs powder and is treated with heat for one hour at an operating temperature of 700 deg.C. After heat treatment, Al2O3 12 of 2,300 Angstrom thickness is coated to obtain a film thickness of lambda/2(2,500 Angstrom ). As a result of checking life of its laser chip treated by lambda/2 coating, sufficient results were obtained that although MTTF (Mean Time to Failure) in the case of conventional coating was 1,000 hours under an operating conductions of 50 deg.C and 30 mW, its MTTF in the case of coating achieving by the preven tion was extended up to 2,000 hours.
公开日期	1988-02-25
申请日期	1986-08-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85026]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	TAKEHARA HIROSHIGE,KUME MASAHIRO,SHIMIZU YUICHI,et al. Manufacture of semiconductor laser. JP1988044788A. 1988-02-25.

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