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	Single-axial mode semiconductor laser device
	NAGAI HARUO; MATSUOKA TAKASHI
	1985-09-12
著作权人	NIPPON DENSHIN DENWA KOSHA
专利号	JP1985178685A
国家	日本
文献子类	发明申请
其他题名	Single-axial mode semiconductor laser device
英文摘要	PURPOSE:To enable the element of excellent characteristics such as the exposure area of a diffraction grating and the stability of period to be produced with good reproducibility by utilizing the current injection to a wave guide for phase control without any diffraction grating in the middle of two wave guides that form diffraction gratings. CONSTITUTION:A thin film stripe of SiO2 or Si3N4 with a width corresponding to the distance between diffraction gratings 10 and 11 is selectively formed on the surface of an n type InP, and a photo resist film is formed thinly thereon. Further, a pattern of diffraction grating utilizing the two-flux interference of gas laser beam is exposed over the whole surface. Next, only the InP is etched by using the remaining resist as a mask; thereafter, the resist and the dielectric thin film are removed, thus obtaining an InP substrate 1 having the part of formating diffraction grating in stripe form. Then, crystal layers 2-5 are laminated, and further electrodes are formed by evaporation and the like. A forward current is injected from electrodes 7 and 9 of a hetero structural element thus obtained to the p-n junction of the part of forming two diffraction gratings. Thus, a spatial phase difference of pi can be imparted between diffraction gratings of two regions A and B by varying the characteristic of light absorption at the part of the wave guide in a region C according to the amount of carriers injected to this part.
公开日期	1985-09-12
申请日期	1984-02-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84996]
专题	半导体激光器专利数据库
作者单位	NIPPON DENSHIN DENWA KOSHA
推荐引用方式 GB/T 7714	NAGAI HARUO,MATSUOKA TAKASHI. Single-axial mode semiconductor laser device. JP1985178685A. 1985-09-12.

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