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	Semiconductor laser device
	MOTODA TAKASHI; KOKUBO YOSHIHIRO
	1989-05-31
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989138774A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To decrease the manufacturing cost and to increase accuracy by a method wherein a plurality of semiconductor laser devices of different optical waveguide lengths is packaged in one and the same chip provided with opposing resonator end faces and the optical waveguides are so linked near the resonator end faces as to give rise to interference between waves in lateral mode. CONSTITUTION:A semiconductor laser device of this design is constituted of an element 11 built of stripes to be optical waveguides for lateral mode control, an element 12 built of strips to be optical waveguides different in length from those of the element 11, and stripes 13a and 13b to connect the elements 11 and 12 in the neighborhood of end faces 14a and 14b for the creation of lateral mode interference. With a wave allowing the elements 11 and 12 to agree with each other in longitudinal mode being capable oscillation, a longitudinal mode distance DELTAlambda0 is quite long, enabling the selection of a mode nearest to a wavelength capable of a maximum gain on the threshold current involved.
公开日期	1989-05-31
申请日期	1987-11-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84953]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	MOTODA TAKASHI,KOKUBO YOSHIHIRO. Semiconductor laser device. JP1989138774A. 1989-05-31.

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