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	Semiconductor device and fabrication thereof
	MIYASHITA MUNEHARU
	1992-11-24
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1992336465A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device and fabrication thereof
英文摘要	PURPOSE:To obtain a planar quantum fine line in a groove formed in a semiconductor substrate without causing a step on the surface of a multilayer semiconductor. CONSTITUTION:A groove 1a is formed in a first type semiconductor substrate 1 and thin a second type semiconductor layer 2 having lower electron affinity than the first type semiconductor, a first type highly resistive semiconductor layer 3 and a second type semiconductor layer 2 are laminated sequentially on the side face and the bottom of the groove 1a so that the groove 1a is buried thus forming a layer structure. A second n-type doped semiconductor layer 4 is then formed on the surface including the top face of the groove 1a. Since no step exist on the surface after formation of quantum fine line, following steps including photolithographic step are simplified resulting in a high performance semiconductor device.
公开日期	1992-11-24
申请日期	1991-05-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84947]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	MIYASHITA MUNEHARU. Semiconductor device and fabrication thereof. JP1992336465A. 1992-11-24.

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