Semiconductor device and fabrication thereof | |
MIYASHITA MUNEHARU | |
1992-11-24 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1992336465A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor device and fabrication thereof |
英文摘要 | PURPOSE:To obtain a planar quantum fine line in a groove formed in a semiconductor substrate without causing a step on the surface of a multilayer semiconductor. CONSTITUTION:A groove 1a is formed in a first type semiconductor substrate 1 and thin a second type semiconductor layer 2 having lower electron affinity than the first type semiconductor, a first type highly resistive semiconductor layer 3 and a second type semiconductor layer 2 are laminated sequentially on the side face and the bottom of the groove 1a so that the groove 1a is buried thus forming a layer structure. A second n-type doped semiconductor layer 4 is then formed on the surface including the top face of the groove 1a. Since no step exist on the surface after formation of quantum fine line, following steps including photolithographic step are simplified resulting in a high performance semiconductor device. |
公开日期 | 1992-11-24 |
申请日期 | 1991-05-14 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84947] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | MIYASHITA MUNEHARU. Semiconductor device and fabrication thereof. JP1992336465A. 1992-11-24. |
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