QQ客服 官方微博 反馈留言

	Method for fabricating a semiconductor laser diode
	YOO, TAE KYUNG; CHO, MEOUNG WHAN; SEO, JU OK; LEEM, SHI JONG; NOH, MIN SOO
	1996-05-22
著作权人	LG ELECTRONICS INC.
专利号	EP0713275A1
国家	欧洲专利局
文献子类	发明申请
其他题名	Method for fabricating a semiconductor laser diode
英文摘要	A method for fabricating a semiconductor laser for performing etching and regrowing of a semiconductor layer of the semiconductor laser in a process once by using a liquid phase etching which is a characteristic of a liquid phase epitaxy is executed by forming a DH-structured semiconductor layer on a substrate, forming a dielectric layer on the semiconductor layer, selectively etching the dielectric layer to expose a predetermined portion of the semiconductor layer, and selectively etching the exposed semiconductor layer using the dielectric layer as mask via the liquid phase etching method and successively regrowing the semiconductor layer on the etched portion via the liquid phase epitaxy. Thus, the DH structure is etched using a melt-back process to instantly execute the regrowth under the state of being unexposed to the air for easily providing the semiconductor laser of high reliability.
公开日期	1996-05-22
申请日期	1995-11-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84866]
专题	半导体激光器专利数据库
作者单位	LG ELECTRONICS INC.
推荐引用方式 GB/T 7714	YOO, TAE KYUNG,CHO, MEOUNG WHAN,SEO, JU OK,et al. Method for fabricating a semiconductor laser diode. EP0713275A1. 1996-05-22.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。