Semiconductor laser device | |
KONO MASAKI | |
1988-10-14 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1988248192A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To obtain a light source hardly generating aberration by fixing a single mode fiber at a light emitting spot in the upper edge face of a laser chip and extracting circular outgoing beams through the single mode fiber. CONSTITUTION:A single mode fiber 11 mounted at a light-emitting spot in the upper edge face of a laser chip 3 is fastened to the chip 3 with a resin 12. The core diameter of the fiber 11 is conformed to the light-emitting spot in the upper edge face of the chip 3 and the resin 12 is used on the fixation. The bond area of the fiber 11 is AR-coated previously, thus inhibiting reflection on bond. Since a beam diameter generally extends over 2-3mum and the core diameter of the fiber 11 extends over values such as 9-10mum, the chip 3 and the fiber 11 are brought near as much as possible and assembled, thus efficiently coupling beams. Accordingly, beams emitted from the fiber 11 are shaped, and formed to a circular shape, and the greater part of aberration are removed, thus acquiring ideal laser beams 4a. |
公开日期 | 1988-10-14 |
申请日期 | 1987-04-03 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84855] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | KONO MASAKI. Semiconductor laser device. JP1988248192A. 1988-10-14. |
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