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	Semiconductor laser device
	OKABE NAOKO; ITOU KUNIO
	1985-07-11
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1985130188A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To contrive the increase in external differential quantum efficiency and the decrease in threshold value by a method wherein one cavity end surface from which laser beams are emitted is coated with a dielectric of required thickness, and the other cavity end surface with a metal film. CONSTITUTION:A metal is evaporated to the P-side electrode 7, and alloying treatment is performed by evaporating the N-side electrode 8 to the substrate 1 side. This semiconductor laser wafer is cleft to a strip form, and an Au film of required thickness is produced by sputtering one of end surfaces. Next, an alumina film is formed likewise by sputtering with tie other end surface upward. Strip lasers coated at both ends are cleft and separated one by one element, resulting in the manufacture of the titled device. In this case, the thickness of the alumina film is lambda/(20n)-9lambda/(20n), where the wavelength is lambda; the external differential quantum efficiency increases because of high permeability, and the threshold current shows a low value.
公开日期	1985-07-11
申请日期	1983-12-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84815]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	OKABE NAOKO,ITOU KUNIO. Semiconductor laser device. JP1985130188A. 1985-07-11.

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