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	Semiconductor light-emitting element
	IWAMURA HIDETOSHI; HIRAYAMA YOSHIO; OKAMOTO HIROSHI
	1987-10-13
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1987232986A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting element
英文摘要	PURPOSE:To reduce the strain due to stress of the AlGaAs active layer in an AlGaAs visible light laser by manufacturing the laser using an In-doped GaAs substrata or an InSi-doped GaAs substrate. CONSTITUTION:A semiconductor light-emitting element is composed of a PGaAs layer 1 (thickness=0.2 mum), a P-type Al0.6Ga0.4AS clad layer 2 (thickness=5 mum), and Al0.2Ga0.8As active layer 3 (thickness=0.1 mum), an N-type Al0.6Ga0.4As clad alyer 4 (thickness=5mum) and an InSi-doped N-type GaAs substrate 9. The grating constant of the InSi-doped substrate having an In doping concentration of 5 X10cm becomes larger than that of an Si-doped substrate. To the active layer 3, the stress of 2 X 10Pa due to strain is applied and the amount of the stress is reduced to 1/5 in comparison with the case of the use of the normal Si-doped GaAs substrate. The rise of the laser oscillation threshold value due to the stress due to strain and the deterioration of this laser are inhibited and the long-lived laser can be obtained at a low threshold value.
公开日期	1987-10-13
申请日期	1986-04-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84798]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	IWAMURA HIDETOSHI,HIRAYAMA YOSHIO,OKAMOTO HIROSHI. Semiconductor light-emitting element. JP1987232986A. 1987-10-13.

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