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	1980-12-23
著作权人	FUJITSU LTD
专利号	JP1980051337B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain a grown layer of good crystallinity and flatness, by previously providing the surface of an interposed layer with stripe grooves having (111) B planes on the side faces and additional grooves located between the stripe grooves when performing liquid-phase epitaxial growth of a GayAl1-yAs layer via GaxAl1-x As layer on a GaAs substrate. CONSTITUTION:A GaxAl1-xAs layer 2 is firstly produced by liquid-phase epitaxial growth on a GaAs substrate A plurality of stripe grooves 2a are provided on the surface of the layer 2 so that the stripe grroves have (111) B planes on the side faces. A plurality of additional V-grooves 2b are provided between the former grooves 2a so that the grooves 2b also have (111) B planes on the side faces. A GayAl1-yAs layer 3 is produced by liquid-phase epitaxial growth on the total surface of the former layer 2 including the grooves 2a, 2b. The (111) B planes of high melt-wetting property are exposed before the layer 3 is grown. This results in improving the crystallinity and flatness and making this method appropriate to manufacture an embedded-type laser device, a rib guide laser device of the like.
公开日期	1980-12-23
申请日期	1978-12-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84785]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	-. -. JP1980051337B2. 1980-12-23.

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