- | |
- | |
1980-12-23 | |
著作权人 | FUJITSU LTD |
专利号 | JP1980051337B2 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To obtain a grown layer of good crystallinity and flatness, by previously providing the surface of an interposed layer with stripe grooves having (111) B planes on the side faces and additional grooves located between the stripe grooves when performing liquid-phase epitaxial growth of a GayAl1-yAs layer via GaxAl1-x As layer on a GaAs substrate. CONSTITUTION:A GaxAl1-xAs layer 2 is firstly produced by liquid-phase epitaxial growth on a GaAs substrate A plurality of stripe grooves 2a are provided on the surface of the layer 2 so that the stripe grroves have (111) B planes on the side faces. A plurality of additional V-grooves 2b are provided between the former grooves 2a so that the grooves 2b also have (111) B planes on the side faces. A GayAl1-yAs layer 3 is produced by liquid-phase epitaxial growth on the total surface of the former layer 2 including the grooves 2a, 2b. The (111) B planes of high melt-wetting property are exposed before the layer 3 is grown. This results in improving the crystallinity and flatness and making this method appropriate to manufacture an embedded-type laser device, a rib guide laser device of the like. |
公开日期 | 1980-12-23 |
申请日期 | 1978-12-21 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84785] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | -. -. JP1980051337B2. 1980-12-23. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论