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	YAMAMOTO SABURO; HAYASHI HIROSHI; KANEIWA SHINJI
	1992-02-04
著作权人	SHARP KK
专利号	JP1992006113B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To form a plurality of laser oscillating units of different oscillating wavelengths in a sole element by forming a plurality of oscillating units of different oscillating wavelengths corresponding to the growing velocity of an epitaxially grown layer. CONSTITUTION:After an N type GaAs current blocking layer 2 is liquid phase epitaxially grown on a P type GaAs substrate 1, stripe slots 3, 4 having widths w1, w2 (w1>w2) are formed. The layer 2 is removed in the slots 3, 4, and becomes a current passage. A clad layer 5, an active layer 6, a clad layer 7, and a cap layer 8 are sequentially laminated again by liquid phase epitaxial growth method, thereby forming a double hetero junction type laser operation multilayer crystal layer. Then, the back surface of the substrate 1 is lapped to form the thickness of a wafer to approx. 120mum, a P type side electrode 9 is then formed, while and an N type side electrode 10 is formed on the upper surface of the layer 8. To divide the laser operation multilayer crystal in the units of the slots 3, 4, an isolating slot 11 is formed in parallel with the slots 3, 4, and the multilayer crystal is etched until reaching the substrate
公开日期	1992-02-04
申请日期	1983-03-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84742]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	YAMAMOTO SABURO,HAYASHI HIROSHI,KANEIWA SHINJI. -. JP1992006113B2. 1992-02-04.

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