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	Semiconductor light emitting device
	SANAKA, YUMI; IKEDA, MASAO
	1999-08-24
著作权人	SONY CORPORATION
专利号	US5943355
国家	美国
文献子类	授权发明
其他题名	Semiconductor light emitting device
英文摘要	A semiconductor light emitting device composed of an n-type cladding layer, an n-type guide layer, an active layer, a p-type guide layer, and a p-type cladding layer which are sequentially laminated on a substrate. The p-type guide layer is formed from ZnSSe mixed crystal doped with nitrogen. That side of the p-type guide layer which is adjacent to the p-type cladding layer is a p-type semiconductor region in which the concentration of nitrogen is 2x1017 cm-3, and that side adjacent to the active layer is an intrinsic semiconductor region. The p-type cladding layer is formed from ZnMgSSe mixed crystal doped with nitrogen. That side of the p-type cladding layer which is adjacent to the p-type guide layer is the low-concentration region in which the concentration of nitrogen is 1x1017 cm-3 which is lower than the concentration at which the rate of activation begins to decrease. The opposite side is the high-concentration region in which the concentration of nitrogen os 2x1017 cm-3 which is lower than the seturated concentration. The semiconductor light emitting device has a prolonged life owing to the adequate concentration of p-type impurity in the p-type cladding layer.
公开日期	1999-08-24
申请日期	1997-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84683]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	SANAKA, YUMI,IKEDA, MASAO. Semiconductor light emitting device. US5943355. 1999-08-24.

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