Semiconductor light emitting device | |
SANAKA, YUMI; IKEDA, MASAO | |
1999-08-24 | |
著作权人 | SONY CORPORATION |
专利号 | US5943355 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor light emitting device |
英文摘要 | A semiconductor light emitting device composed of an n-type cladding layer, an n-type guide layer, an active layer, a p-type guide layer, and a p-type cladding layer which are sequentially laminated on a substrate. The p-type guide layer is formed from ZnSSe mixed crystal doped with nitrogen. That side of the p-type guide layer which is adjacent to the p-type cladding layer is a p-type semiconductor region in which the concentration of nitrogen is 2x1017 cm-3, and that side adjacent to the active layer is an intrinsic semiconductor region. The p-type cladding layer is formed from ZnMgSSe mixed crystal doped with nitrogen. That side of the p-type cladding layer which is adjacent to the p-type guide layer is the low-concentration region in which the concentration of nitrogen is 1x1017 cm-3 which is lower than the concentration at which the rate of activation begins to decrease. The opposite side is the high-concentration region in which the concentration of nitrogen os 2x1017 cm-3 which is lower than the seturated concentration. The semiconductor light emitting device has a prolonged life owing to the adequate concentration of p-type impurity in the p-type cladding layer. |
公开日期 | 1999-08-24 |
申请日期 | 1997-05-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84683] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORPORATION |
推荐引用方式 GB/T 7714 | SANAKA, YUMI,IKEDA, MASAO. Semiconductor light emitting device. US5943355. 1999-08-24. |
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