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	Semiconductor laser
	KAWANO HIDEO
	1992-04-28
著作权人	NEC CORP
专利号	JP1992127595A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To realize a lateral mode control small in astigmatic difference by a method wherein the injection width of a current in a lateral mode control type AlGaInP semiconductor laser is set much smaller than the width of an effective refractive index distribution provided in parallel with an active layer. CONSTITUTION:An etching process is carried out with a mixed solution of H3PO4, H2O2, and H2O and an etching solution of H2SO4 as far as a halfway point of a P-(Al0.6Ga0.4)0.5In0.5P clad layer 15, and the clad layer 15 is set as thick as 0.2-0.3mum on both the sides of a stripe-like mesa. Only a P-Ga0.5In0.5P car layer 16 is selectively etched with the mixed solution of H3PO4, H2O2, and H2O to enable the width B of the cap layer 16 to be smaller than the width A of the upper part of the clad layer 15 of the stripe-like mesa by the control of side etching. At this point, as the injection width A of a current for laser oscillation is set much smaller than the width C of an effective refractive index distribution provided in parallel with the active layer 14, the wave front of laser rays is small in distortion and the astigmatic difference becomes smaller than 5mum.
公开日期	1992-04-28
申请日期	1990-09-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84672]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWANO HIDEO. Semiconductor laser. JP1992127595A. 1992-04-28.

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