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	Manufacture of semiconductor laser
	FUJIWARA KIYOSHI; ISHINO MASATO; TAKENAKA NAOKI; MATSUI YASUSHI
	1992-08-19
著作权人	松下電器産業株式会社
专利号	JP1992229682A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To stably manufacture a buried-type semiconductor laser whose laser characteristic is good and whose reliability is high. CONSTITUTION:An n-InP buffer layer 102, an InGaAsP active layer 103, a p-InP clad layer 104 and a p-InGaAsP surface protective layer 105 are epitaxially grown sequentially on an n-InP substrate 101 whose main plane is a (100) plane. A stripe-shaped mask 106, for etching use, which is parallel to a direction is formed by a photolithographic method and a dry etching method. The n-InP buffer layer 102 is etched down to the lower part of the InGaAsP active layer 103 by using a mixed solution which contains hydrochloric acid, hydrogen peroxide water and acetic acid; a mesa stripe 107 is formed. Then, the insulating film 106 is removed; the p-InGaAsP surface protective layer 105 is removed by using a mixed solution of sulfuric acid with hydrogen peroxide water; after that, InP current-blocking layers 108, 109 are grown selectively in regions other than the mesa stripe 107 by a liquid epitaxial growth operation; a laser by a buried-type heterostructure is formed.
公开日期	1992-08-19
申请日期	1991-05-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84671]
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	FUJIWARA KIYOSHI,ISHINO MASATO,TAKENAKA NAOKI,et al. Manufacture of semiconductor laser. JP1992229682A. 1992-08-19.

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