Manufacture of semiconductor laser device | |
OTA YOICHIRO; YAGI TETSUYA; NAGAI YUTAKA; MIHASHI YUTAKA | |
1988-10-25 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1988257289A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser device |
英文摘要 | PURPOSE:To obtain a semiconductor laser device whose operating characteristics are good by completely removing an electric-current constriction layer of a second conductivity type at the bottom of a stripe-shaped groove by etching a region from the electric-current constriction layer down to at least a boundary layer of a first conductivity type. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4, a boundary layer 11 and an electric-current constriction layer 5 are formed in succession on a substrate 1 by using an MOCVD method. Then, an etching operation is executed down to the surface of the second p-type clad layer 4; a stripe-shaped groove 10 is formed along the direction of a resonator. Then, two layers, i.e., a buffer layer 6 and a contact layer 7, are formed on the second clad layer 4 and on the electric-current constriction layer 5. Lastly, an n-side electrode 8 is formed on the side of the substrate 1 and a p-side electrode 9 is formed on the side of the contact layer 7; a semiconductor laser device is completed. By this setup, this device operates with good characteristics without causing any intermittent oscillation. |
公开日期 | 1988-10-25 |
申请日期 | 1987-04-14 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84603] |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | OTA YOICHIRO,YAGI TETSUYA,NAGAI YUTAKA,et al. Manufacture of semiconductor laser device. JP1988257289A. 1988-10-25. |
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