Manufacture of semiconductor laser device | |
NAGAI YUTAKA; MIHASHI YUTAKA; YAGI TETSUYA; OTA YOICHIRO | |
1988-06-13 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1988140591A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser device |
英文摘要 | PURPOSE:To prevent the characteristics of a semiconductor laser device from being deteriorated and the reliability from decreasing by selectively etching a first crystalline grown semiconductor layer to form a stripelike groove, exposing the layer including aluminum, and then forming a semiconductor layer including aluminum through a semiconductor layer which does not contain aluminum on the semiconductor substrate in second crystal growing step. CONSTITUTION:A buffer layer 2 and a current block layer 3 are sequentially grown on a substrate 1 by a first crystal growth. After the growth, a stripelike groove 10 is formed by photolithographic technique and etching. In the case of etching, the layer 2 is exposed. Thus, an oxygen-absorbed film 9 coupled with the aluminum is formed on the surface. Then, a buffer layer 4, a first clad layer 5, an active layer 6, a second clad layer 7 and a contact layer 8 are sequentially grown by a second crystal growth. Here, before the layer 5 made of P-type Al0.43Ga0.57As is grown on the layer 2, the layer 4 made of P-type GaAs is grown. Accordingly, the formation of a high resistance layer on the crystal growing boundary can be suppressed. |
公开日期 | 1988-06-13 |
申请日期 | 1986-12-02 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84553] |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NAGAI YUTAKA,MIHASHI YUTAKA,YAGI TETSUYA,et al. Manufacture of semiconductor laser device. JP1988140591A. 1988-06-13. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论