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	Distributed feedback semiconductor laser
	KINOSHITA JUNICHI
	1988-07-09
著作权人	TOSHIBA CORP
专利号	JP1988166282A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback semiconductor laser
英文摘要	PURPOSE:To enable a distributed feedback laser to oscillate in a uniaxial mode up to a high output level, by specifying amounts of phase shift with respect to the cases in which the optical intensity distribution near the phase shift is higher than and it is lower than that of the periphery thereof and to the case. CONSTITUTION:A phase mask which is designed such that a phase shift of 0.3 pi for example can be formed is disposed on an n-type InP substrate 11, and primary diffraction grating having a cycle of 2400 Angstrom for example is formed thereon by means of two-beam interference exposure. Then, a 3 mum GaInAsP optical waveguide layer 13, a 55 mum active layer 14, a p-type InP clad layer 15 and P type GaInAsP ohmic layer 16 for example are epitaxially deposited in that order. After the substrate is mesa etched, a BH (buried hetero) structure is provided by performing inlay deposition and a p electrode 17 and an n electrode 18 are formed. Then a lambda/4 film of Si3N4 is applied on the cleaved end faces to provide antireflective (AR) coats 19.
公开日期	1988-07-09
申请日期	1986-12-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84552]
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	KINOSHITA JUNICHI. Distributed feedback semiconductor laser. JP1988166282A. 1988-07-09.

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