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	Distributed feedback type semiconductor laser
	HIRATA SHOJI
	1991-11-06
著作权人	SONY CORP
专利号	JP1991248492A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To suppress the occurrence of side modes by arranging the coupling coefficient of a grating so that it may change gradually toward both end faces or their vicinities in the longitudinal direction of a laser oscillator and near zero, and putting both end faces of the laser resonator in nonreflecting conditions, and shifting it by a specified phase. CONSTITUTION:By applying treatment such as the anisotropic etching or the like with the photoresist as a mask, it is made so that the amplitude may change gradually toward, for example, both ends 6 or their vicinities and near zero, whereby the coupling coefficient is made to gradually change toward both end faces 6 and their vicinities and near zero. Thus a grating 4 is made in the guide layer 3 having the specified thickness d. Furthermore, this grating 4 is made into such a structure that the phase is slid by lambda/4 at, for example, the center so as to get lambda/4 phase shift, or that lambda/4 phase shift is done equivalently by changing the propagation constant. And second clad layer 5 is grown extensively on this grating 4, and then after forming a cap layer, an electrode, etc., it is put in nonreflecting conditions at both end faces 6 so as to get a DFB laser.
公开日期	1991-11-06
申请日期	1990-02-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84498]
专题	半导体激光器专利数据库
作者单位	SONY CORP
推荐引用方式 GB/T 7714	HIRATA SHOJI. Distributed feedback type semiconductor laser. JP1991248492A. 1991-11-06.

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