Semiconductor luminescent device | |
TANAHASHI TOSHIYUKI; OKAZAKI JIROU | |
1985-12-23 | |
著作权人 | FUJITSU KK |
专利号 | JP1985260183A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor luminescent device |
英文摘要 | PURPOSE:To obtain a semiconductor luminescent device having a low threshold value, high efficiency and high output, and furthermore, having a good far field pattern as well by a method wherein current is concentratedly run to the active region making a difference of resistivity among the InP layers on the (N) side and the active region is dropped in the V-shaped groove. CONSTITUTION:An N type InP layer 2 is deposited covering a striped protrusion on an N type InP layer 1 having the striped protrusion with the N type InP layer 2 and as a semiconductor layer having a resistivity higher than that of the N type InP layer A V-shaped groove 6 is carved in the N type InP layer 2 on the striped protrusion in such a way as to reach into the N type InP layer This semiconductor luminescent device is made into a structure, wherein an N type InP layer 7, an InGaAsP layer to be used as an active layer 3 and a P type InP layer 4 are deposited in this groove 6. The light emission is performed by a double hetero-junction, which is constituted holding the active layer 3, which is the InGaAsP layer, between the N type InP layer 7 and the P type InP layer 4. |
公开日期 | 1985-12-23 |
申请日期 | 1984-06-06 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84459] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU KK |
推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,OKAZAKI JIROU. Semiconductor luminescent device. JP1985260183A. 1985-12-23. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论