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	Semiconductor luminescent device
	TANAHASHI TOSHIYUKI; OKAZAKI JIROU
	1985-12-23
著作权人	FUJITSU KK
专利号	JP1985260183A
国家	日本
文献子类	发明申请
其他题名	Semiconductor luminescent device
英文摘要	PURPOSE:To obtain a semiconductor luminescent device having a low threshold value, high efficiency and high output, and furthermore, having a good far field pattern as well by a method wherein current is concentratedly run to the active region making a difference of resistivity among the InP layers on the (N) side and the active region is dropped in the V-shaped groove. CONSTITUTION:An N type InP layer 2 is deposited covering a striped protrusion on an N type InP layer 1 having the striped protrusion with the N type InP layer 2 and as a semiconductor layer having a resistivity higher than that of the N type InP layer A V-shaped groove 6 is carved in the N type InP layer 2 on the striped protrusion in such a way as to reach into the N type InP layer This semiconductor luminescent device is made into a structure, wherein an N type InP layer 7, an InGaAsP layer to be used as an active layer 3 and a P type InP layer 4 are deposited in this groove 6. The light emission is performed by a double hetero-junction, which is constituted holding the active layer 3, which is the InGaAsP layer, between the N type InP layer 7 and the P type InP layer 4.
公开日期	1985-12-23
申请日期	1984-06-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84459]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	TANAHASHI TOSHIYUKI,OKAZAKI JIROU. Semiconductor luminescent device. JP1985260183A. 1985-12-23.

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