Semiconductor laser | |
JINDOU MASAAKI | |
1989-09-26 | |
著作权人 | NEC CORP |
专利号 | JP1989241885A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To dispense with a beam shaping or a condensing lens by disposing first, second and third regions in a concentrically adjacent manner, and disposing the third, first and second regions in this order from the center of the concentric circle outward. CONSTITUTION:A semiconductor laser is formed of a ringlike active region (first region) 1, Bragg's reflection (DBR) region (second region) 2 surrounding the region 1, and a grating photocoupler region (third region) 3 surrounded by the region 1, and disposed concentrically with respect to a central point 4. The region 3 is formed of an N-type GaAs substrate 5, an N-type Al0.35Ga0.65 As layer 6, a diffraction grating 11 having a concentric group symmetrical with respect to the center 4 and including a modulated period, a high resistance Al0.15Ga0.85As layer 12, and a high resistance Al0.35Ga0.65As layer 13, radiates a circular laser light perpendicularly to the face of an element through a grating photocoupler, thereby condensing it to one point. |
公开日期 | 1989-09-26 |
申请日期 | 1988-03-23 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84437] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | JINDOU MASAAKI. Semiconductor laser. JP1989241885A. 1989-09-26. |
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