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	Semiconductor laser
	JINDOU MASAAKI
	1989-09-26
著作权人	NEC CORP
专利号	JP1989241885A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To dispense with a beam shaping or a condensing lens by disposing first, second and third regions in a concentrically adjacent manner, and disposing the third, first and second regions in this order from the center of the concentric circle outward. CONSTITUTION:A semiconductor laser is formed of a ringlike active region (first region) 1, Bragg's reflection (DBR) region (second region) 2 surrounding the region 1, and a grating photocoupler region (third region) 3 surrounded by the region 1, and disposed concentrically with respect to a central point 4. The region 3 is formed of an N-type GaAs substrate 5, an N-type Al0.35Ga0.65 As layer 6, a diffraction grating 11 having a concentric group symmetrical with respect to the center 4 and including a modulated period, a high resistance Al0.15Ga0.85As layer 12, and a high resistance Al0.35Ga0.65As layer 13, radiates a circular laser light perpendicularly to the face of an element through a grating photocoupler, thereby condensing it to one point.
公开日期	1989-09-26
申请日期	1988-03-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84437]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	JINDOU MASAAKI. Semiconductor laser. JP1989241885A. 1989-09-26.

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