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	Semiconductor device
	TASAI, KUNIHIKO; NAKAJIMA, HIROSHI; FUTAGAWA, NORIYUKI; YANASHIMA, KATSUNORI; ENYA, YOHEI; KUMANO, TETSUYA; KYONO, TAKASHI
	2016-01-05
著作权人	SONY CORPORATION
专利号	US9231375
国家	美国
文献子类	授权发明
其他题名	Semiconductor device
英文摘要	A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07.
公开日期	2016-01-05
申请日期	2013-02-12
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84415]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	TASAI, KUNIHIKO,NAKAJIMA, HIROSHI,FUTAGAWA, NORIYUKI,et al. Semiconductor device. US9231375. 2016-01-05.

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