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	Nitride semiconductor laser device
	KAWAGUCHI, YOSHINOBU; KAMIKAWA, TAKESHI; ITO, SHIGETOSHI
	2010-09-07
著作权人	SHARP KABUSHIKI KAISHA
专利号	US7792172
国家	美国
文献子类	授权发明
其他题名	Nitride semiconductor laser device
英文摘要	A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.
公开日期	2010-09-07
申请日期	2008-10-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84393]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KAWAGUCHI, YOSHINOBU,KAMIKAWA, TAKESHI,ITO, SHIGETOSHI. Nitride semiconductor laser device. US7792172. 2010-09-07.

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