| Semiconductor laser device | |
| ISSHIKI KUNIHIKO | |
| 1990-08-24 | |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 专利号 | JP1990213187A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable manufacture of an AlGaAs laser by a simple process and also to secure the reliability thereof by forming a partially stripe-shaped Zn diffused region from the surface of a laser wafer at least to an active layer. CONSTITUTION:A clad layer 2 is made to crystal-grow first on a GaAs substrate Next, a resist formed by an interference exposure method being used as a mask, a diffraction grating 5 is formed by etching. Thereafter, a waveguide layer 4, an active layer 3 and a clad layer 6 are made to crystal-grow secondly. With an insulating film 11 used as a diffusion mask, subsequently, Zn atoms are diffused to form a Zn diffused region 10. Lastly, metal electrodes 7 and 8 are formed, a wafer is separated into chips, an AR film is applied for coating on the front end face thereof, and thus an element is completed. Since an active region is formed by diffusion in this way, there is no process of imparing reliability, and a laser of high reliability can be obtained easily by a simple process requiring only crystal growth in two times. |
| 公开日期 | 1990-08-24 |
| 申请日期 | 1989-02-13 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84362]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO. Semiconductor laser device. JP1990213187A. 1990-08-24. |
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