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	Semiconductor laser device
	AOYAGI, TOSHITAKA; SAKAINO, GO
	2003-05-15
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US20030091080A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	An n-InP second upper cladding layer 22 is laid on a p-InP lower cladding layer 14 while an active layer 16 whose upper and lower boundary surfaces are uniformly flat in the direction of optical waveguide is interposed therebetween. A diffraction layer 20 having a phase-shifted structure provided in the direction of optical waveguide is interposed between the lower cladding layer 14 and the active layer 16, or between the second upper cladding layer 22 and the active layer 16. The length L of the diffraction grating layer 20 in the direction of an optical waveguide is taken as L=150 cm-1; and a value kappaL, which is the product of the length L and the mean coupling factor kappa, is taken as 5.6>kappaL>3.0.
公开日期	2003-05-15
申请日期	2001-11-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84271]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	AOYAGI, TOSHITAKA,SAKAINO, GO. Semiconductor laser device. US20030091080A1. 2003-05-15.

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